Pushing the Boundaries of Nanoscale Processing, Characterization and Analysis

Beyond AFM Topography: Quantitative nanoscale measurements of mechanical, electrical, and electromechanical properties, video-rate imaging and chemical characterization at the nanoscale

From polymers to 2D materials to semiconductor research the need for quantitative measurement techniques at the nanoscale has long been sought by the materials science and engineering communities. In this talk, Asylum Research will discuss how the latest advances in Atomic Force Microscopy deliver quantitative results beyond topography and give access to nanomechanical, nanochemical, nanoelectrical and temporally sensitive measurements across the breadth of sample types and conditions.

Technological Advancements in Electron Backscattered Diffraction – The Transition from CCD to CMOS Based Detectors

For the past twenty years Electron Backscattered Diffraction (EBSD) systems relied on charge-coupled device (CCD) cameras for pattern capture. This technology was well suited for EBSD analysis and improvements in the devices, the electronics, and computers over the years provided a steady increase in the speed of data acquisition. However, due to the serial nature of these devices, the highest practical acquisition rates have now been achieved. To overcome this limitation, new complementary metal-oxide-semiconductor (CMOS) sensors are now replacing the trusted CCD. Due to the parallelization of the signal readout of the CMOS, the practical speed of EBSD analysis has increased significantly, in some cases, tenfold compared to older CCD technology. These advancements result not only in increasing the maximum speed of the EBSD system, but more importantly, allows a higher resolution pattern to be sampled. This leads to obvious benefits, such as larger datasets, reduced instrument time, and improved angular accuracy and precision at high speed. Increased acquisition provides simultaneous characterization of fine and course grained features, improves mapping of beam sensitive materials, and allows for crystallographic and phase mapping on the centimeter to nanometer scale.

Chemical and Physical Characterization of Nanostructures Using Nanoprobing, EDS, and EBSD

There is great interest in characterizing structures on the submicron level. Semiconductor fabrication can now produce devices containing features below 20 nm in size. Coatings on optical, flexible electronics and photovoltaic devices can be as thin a 2 nm and material scientists are investigating the physical behavior of ultra-fine-grained alloys.

This talk will cover the various techniques and instruments that are used to measure nanostructures in the SEM and FIB. This includes nanomanipulators and their use in lamellae lift-out and investigating dislocations and defects in semiconductor devices, thin film analysis using EDS, and EDS analysis of bulk samples and lamellae using windowless detectors. Transmission Kikuchi Diffraction will also be discussed showing that crystallographic information can be obtained down to a 2 nm resolution.

Ultra-low Temperature Systems for Quantum Computing

Superconductor- and semiconductor-based Qubits are two of the most promising candidates for the realization of a quantum computer. Both systems have similar experimental requirements - mK temperatures and high numbers of I/O lines. This talk will look at how platforms for ultra-low temperatures have evolved in line with the needs of the QIP community and what the future cryogenic requirements might be.

Advanced Plasma Processing for Nanoscale Features

Semiconductor based materials road maps for electronic devices typically focus on miniaturization to give greater computing power, more memory storage etc., per unit area. As the scale reduces from micron through submicron to nanometric dimensions new issues are encountered that require new techniques to resolve them. In this talk Oxford Instruments will present recent developments in overcoming some the challenges in achieving nanometric control of processes.

Scientific Camera and Spectrograph Technologies: Features, Limitations, and Applications

Choosing the right camera and spectrograph for a specific application can be challenging. Ultimately, the best solution will be determined by prioritizing three key performance parameters; sensitivity, speed, and resolution. In this talk Andor Technology will discuss the most sensitive back-illuminated sCMOS camera and the most versatile intelligent spectrograph for both Life and Physical science applications.