NNCI Etch Symposium Program

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This program is tentative and subject to change. Please check back regularly for updates.

Session Themes:

Device-driven plasma etch challenges
Advances in atomic scale processing
Advances in Cryogenic Etching
Plasma characterization, diagnostics, and manipulation
Modeling, artificial intelligence, and machine learning for plasma etching
Sustainability in plasma etching

Monday, June 30

Venue: MIT Media Lab, 75 Amherst Street, Building E14, 6th Floor

Time	Session	Speakers
8:00 AM	Registration Opens
8:00 AM	Breakfast
9:00 AM	Opening Remarks	Jorg Scholvin, Associate Director, Fab.nano, MIT Ling Xie, Principal Scientist, Harvard
9:10 AM	Keynote	Vladimir Bulović, Director, MIT.nano; Fariborz Maseeh (1990) Professor of Emerging Technology
9:40 AM	Session 1A	Moderator: Jorg Scholvin Joshua Perozek, Research Assistant, MIT Talk: Self-aligned fabrication of vertical fin-based structures Evan Litch, Graduate Research Assistant, U. Michigan Talk: High Aspect Ratio Plasma Etching using pulsed low RF biases
10:20 AM	Break & Sponsor Networking
11:00 AM	Session 1B	Moderator: Durga Gajula Igor Kaganovich, Research Physicist Princeton PPPL Talk: Modeling of Modern Plasma Processing Reactors: Plasma Physics and Surface Chemistry Mahmoud Elgarhy. Post Doctoral Fellow, U. Houston Talk: Atomic Layer Etching of Si in Cl2 and HBr Containing Plasmas
11:40 PM	Sponsor Showcase	NNCI Etch Symposium Sponsors
12:20 PM	Lunch & Sponsor Networking
1:40 PM	Session 2	Moderator: Ling Xie David Graves, Professor of Chemical and Biological Engineering; Associate Laboratory Director, Princeton PPPL Talk: Graves-Princeton PPPL: A reduced order model of Si-Cl2-Ar atomic layer etching Nicholas Trainor, Graduate Student, Penn State Talk: Cl2 based selective etching of TMDs Neil Sinclair, Research Scientist, Harvard Talk: Lithium Tantalate device fabrication and performance Paul Plate, Deputy Head of Plasma Application, SENTECH Talk: Atomic Layer Etching (ALE): A Pathway to Advanced Semiconductor
3:00 PM	Break & Poster Session A
4:00 PM	Session 3	Moderator: Lavendra Mandyam Wojciech Osowiecki, Staff Product Marketing Engineer, Lam Research Talk: Achieving sustainability in the semiconductor industry: The impact of simulation and artificial intelligence Yevgeny Raitses, Physicist, Princeton PPPL Talk: Gentle processing of sensitive materials using a low temperature magnetized plasma Brian Yount, Regional Product Manager, SPTS Division, KLA Talk: Addressing Etch Challenges for Strongly Bonded Materials Used in Photonics & MEMS
5:20 PM	Walk over to MIT.nano
5:30 PM	Tours of MIT.nano

Tuesday, July 1

Venue: MIT Media Lab, 75 Amherst Street, Building E14, 6th Floor

Time	Session	Speakers
7:30 AM	(Optional) Tour of MIT.nano
8:00 AM	Breakfast
9:00 AM	Etch Keynote	Christopher Vallee, Professor, College of Nanotechnology, Science, and Engineering Department of Nanoscale Science & Engineering, University of Albany Talk: 50 years of Plasma Etching Innovation in the Semiconductor Industry: From RIE to ALE
9:40 AM	Session 4A	Moderator: Lavendra Mandyam Zach Zajo, Process Engineer, Lam Research Talk: Experimental and Computational Investigation of Plasma-less selective etching of SiGe by F2 Keiichiro Asakawa-Ulvac Japan Talk: Optimization of Neutral Loop Discharge (NLD) using Machine Learning
10:20 AM	Break & Sponsor Networking
11:00 AM	Session 4B	Moderator: Durga Gajula Abrar Abdurrob, PhD Candidate, Stony Brook University Talk: Sustainable Microelectronics in the AI age Gurpreet Lugani, Engineer, Micron Technology Talk: Strategic-tiers to lower direct emissions from plasma dry etching with emphasis on replacement-tier. Nicholas Chittock, Quantum Market Specialist, Oxford Instruments Talk: Atomic scale processing for fabrication of quantum devices Jeffrey Daulton, Associate Staff, MIT Lincoln Lab Talk: ALE of WIde- and Ultrawide-Bandgap Semiconductors
12:20 PM	Lunch & Sponsor Networking
1:40 PM	Keynote	David Gottfried, Director, NNCI Coordinating Office Talk: The Evolution of Nanotechnology Infrastructure Network: Past Achievements, Current Impact, and Future Directions
2:20 PM	Session 5	Moderator: Vince Genova Mark Kushner, George I. Haddad Professor of Electrical Engineering and Computer Science, U. Michigan Talk: Mechanisms for cryogenic etching of high aspect ratio features. Xingyi Shi, Scientist, Applied Materials Talk: On using pulsed plasmas for high aspect ratio silicon etching Shiva Mudide, Graduate Student, MIT Talk: Deep Learning Outperforms RCWA for Multimodal measurement of high-aspect-ratio nanostructures
3:40 PM	Break & Poster Session B
4:40 PM	Session 6
6:00 PM	(Optional) Tours of MIT.nano

Wednesday, July 2

Venue: MIT Media Lab, 75 Amherst Street, Building E14, 6th Floor

Time	Session	Speakers
7:30 AM	(Optional) Tour of MIT.nano
8:00 AM	Breakfast
9:00 AM	Panel Discussion 1	Moderator: Vincent J. Genova Mark Kushner, George I. Haddad Professor of Electrical Engineering and Computer Science, U. Michigan Christophe Vallee, Professor, College of Nanotechnology, Science, and Engineering Department of Nanoscale Science & Engineering, University of Albany David Coumou, Managing Director of core R&D, Applied Materials
10:15 AM	Break & Sponsor Networking
11:15 AM	Panel Discussion 2	Moderator: Vincent J. Genova Mark Kushner, George I. Haddad Professor of Electrical Engineering and Computer Science, U. Michigan Christophe Vallee, Professor, College of Nanotechnology, Science, and Engineering Department of Nanoscale Science & Engineering, University of Albany David Coumou, Managing Director of core R&D, Applied Materials
12:15 PM	Closing Remarks	Jorg Scholvin, Associate Director, Fab.nano, MIT Ling Xie, Principal Scientist, Harvard
12:20 PM	Lunch & Sponsor Networking
1:30 PM	(Optional) Tour of MIT.nano or Harvard CNS