MIT IAP 2026—MIT.nano: A Brief Introduction to e-beam Lithography

A Brief Introduction to e-beam Lithography

Instructors: Mark K. Mondol, ebeam Domain Expert; Juan Ferrera, Research Scientist
Date/Time: Thursday, January 22, 2026, 3:00 - 4:30pm
Location: MIT.nano Building 12 Room 0168 (Basement teaching space)
Advanced sign-up required. Register by January 21, 2026. Open to MIT Community. Limited to 45 participants.

E-beam lithography enables advanced semiconductor chips; without e-beam lithography minimum features sizes would be limited to approximately 200 nm. In research environments e-beam lithography allows direct write, maskless lithography enabling quick and relatively cheap design changes.

This talk will cover a high level overview of e-beam lithography including- reasons for e-beam lithography, e-beam columns, pattern design and formation, pattern placement and resolution, electron interactions with resist, Proximity Effect Correction, resist characteristics, exposure and pattern transfer.

Anyone with an interest in e-beam lithography, from neophyte to experienced user, should be able to gain something from this talk.

First name:

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Have you ever done e-beam lithography?

Yes

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Have you ever done photo lithography before?

Yes

No

Have you ever used an SEM before?

Yes

No

Are you a MIT.nano user?

Yes

No

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