NNCI Etch Symposium Program

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This program is tentative and subject to change. Please check back regularly for updates.

Session Themes:

Device-driven plasma etch challenges
Advances in atomic scale processing
Advances in Cryogenic Etching
Plasma characterization, diagnostics, and manipulation
Modeling, artificial intelligence, and machine learning for plasma etching
Sustainability in plasma etching

Monday, June 30

Venue: MIT Media Lab, 75 Amherst Street, Building E14, 6th Floor

Time	Session	Speakers
8:00 AM	Registration Opens
8:00 AM	Breakfast
9:00 AM	Opening Remarks	Jorg Scholvin, Associate Director, Fab.nano, MIT Ling Xie, Principal Scientist, Harvard
9:10 AM	Keynote	Vladimir Bulović, Director, MIT.nano; Fariborz Maseeh (1990) Professor of Emerging Technology
9:40 AM	Session 1A	Moderator: Jorg Scholvin Self-Aligned Fabrication of Vertical Fin-Based Structures Joshua Perozek, Research Assistant, MIT High Aspect Ratio Plasma Etching Using Pulsed Low RF Biases Evan Litch, Graduate Research Assistant, U. Michigan
10:20 AM	Break & Sponsor Networking
11:00 AM	Session 1B	Moderator: Durga Gajula Modeling of Modern Plasma Processing Reactors: Plasma Physics and Surface Chemistry Igor Kaganovich, Research Physicist Princeton PPPL Atomic Layer Etching of Si in CI2, Br2, HBr-containing Plasmas Mahmoud Elgarhy. Post Doctoral Fellow, U. Houston
11:40 AM	Sponsor Showcase	NNCI Etch Symposium Sponsors
12:20 PM	Lunch & Sponsor Networking
1:40 PM	Session 2	Moderator: Ling Xie A reduced order model of Si-Cl2-Ar atomic layer etching David Graves, Professor of Chemical and Biological Engineering; PPPL Associated Faculty, Princeton University CI2-based Selective Etching of Transition Metal Dichalcogenides Nicholas Trainor, Graduate Student, Penn State Thin-film Lithium Tantalate Device Fabrication and Performance Neil Sinclair, Research Scientist, Harvard Atomic Layer Etching (ALE): A Pathway to Advanced Semiconductor Paul Plate, Deputy Head of Plasma Application, SENTECH
3:00 PM	Break & Poster Session A
4:00 PM	Session 3	Moderator: Lavendra Mandyam Achieving Sustainability in the Semiconductor Industry: The Impact of Simulation and AI Wojciech Osowiecki, Staff Product Marketing Engineer, Lam Research Gentle Processing of Sensitive Materials Using a Low Temperature Magnetized Plasma Yevgeny Raitses, Physicist, Princeton PPPL Addressing Etch Challenges for Strongly Bonded Materials Used in Photonics and MEMS Brian Yount, Regional Product Manager, SPTS Division, KLA Deep Learning Outperforms RCWA for Multimodal Measurement of High-Aspect-Ratio Nanostructures Shiva Mudide, Graduate Student, MIT
5:20 PM	Walk over to MIT.nano
5:30 PM	Tours of MIT.nano

Tuesday, July 1
Venue: MIT Media Lab, 75 Amherst Street, Building E14, 6th Floor

Time	Session	Speakers
7:30 AM	(Optional) Tour of MIT.nano
8:00 AM	Breakfast
9:00 AM	Etch Keynote	50 years of Plasma Etching Innovation in the Semiconductor Industry: From RIE to ALE Christophe Vallee, Professor, College of Nanotechnology, Science, and Engineering Department of Nanoscale Science & Engineering, University of Albany
9:40 AM	Session 4A	Moderator: Lavendra Mandyam Experimental and Computational Investigation of Plasma-less selective etching of SiGe by F2 Zach Zajo, Process Engineer, Lam Research Optimization of Neutral Loop Discharge (NLD) using Machine Learning Keiichiro Asakawa-Ulvac Japan
10:20 AM	Break & Sponsor Networking
11:00 AM	Session 4B	Moderator: Durga Gajula Sustainable Microelectronics in the Age of AI Abrar Abdurrob, PhD Candidate, Stony Brook University Strategic-tiers to Lower Direct Emissions from Plasma Dry Etch Processes with Emphasis on Replacement-tier Gurpreet Singh Lugani, Engineer, Micron Technology Atomic Scale Processing for Fabrication of Quantum Devices Nicholas Chittock, Quantum Market Specialist, Oxford Instruments ALE of Wide- and Ultrawide-Bandgap Semiconductors Jeffrey Daulton, Associate Staff, MIT Lincoln Lab
12:20 PM	Lunch & Sponsor Networking
1:40 PM	Keynote	The Evolution of Nanotechnology Infrastructure Network: Past Achievements, Current Impact, and Future Directions David Gottfried, Director, NNCI Coordinating Office
2:20 PM	Session 5	Moderator: Vince Genova Mechanisms for Cryogenic Plasma Etching of High Aspect Ratio Features Mark Kushner, George I. Haddad Professor of Electrical Engineering and Computer Science, U. Michigan On Using Pulsed Plasmas for High-Aspect Ratio Silicon Etching Xingyi Shi, Scientist, Applied Materials
3:00 PM	(Optional) Tours of MIT.nano & Harvard CNS

Wednesday, July 2
Venue: MIT Media Lab, 75 Amherst Street, Building E14, 6th Floor

Time	Session	Speakers
7:30 AM	(Optional) Tour of MIT.nano
8:00 AM	Breakfast
9:00 AM	Panel Discussion 1	Moderator: Vincent J. Genova Mark Kushner, George I. Haddad Professor of Electrical Engineering and Computer Science, U. Michigan Christophe Vallee, Professor, College of Nanotechnology, Science, and Engineering Department of Nanoscale Science & Engineering, University of Albany David Coumou, Managing Director of core R&D, Applied Materials
10:15 AM	Break & Sponsor Networking
11:00 AM	Panel Discussion 2	Moderator: Vincent J. Genova Mark Kushner, George I. Haddad Professor of Electrical Engineering and Computer Science, U. Michigan Christophe Vallee, Professor, College of Nanotechnology, Science, and Engineering Department of Nanoscale Science & Engineering, University of Albany David Coumou, Managing Director of core R&D, Applied Materials
12:15 PM	Closing Remarks	Jorg Scholvin, Associate Director, Fab.nano, MIT Ling Xie, Principal Scientist, Harvard
12:20 PM	Lunch & Sponsor Networking