The Atomic Layer Deposition (ALD) has been successfully moved to MIT.nano! We replaced the back panel with a redesigned plate with improved port locations. Installation is ongoing (you can see the pump ready to get plumbed up). Once install is complete, qualification will start. The ALD will be listed in Coral under (B12 / Deposition / ALD-AllPurpose).
The ALD is a atomic layer deposition tool that deposits Al2O3, HfO2 and WN through thermal-assisted process, for RED processes. The deposition takes place in an atomic layer-by-layer fashion, and thereby allows for atomic-scale control of the film thickness. Thin layers (sub-5 nm) can be very well deposited with extremely good uniformity and conformal coverage at moderatively low temperatures (typically below 300 C). Deposition can be done on materials such as Si, III-V and 2D materials. Proper cleaning of the samples (e.g. RCA, Piranha, nanostrip, O2 plasma, etc) before deposition is required to help maintain the cleaningness of the system. No organics (e.g. photoresists) are allowed in this tool.