MIT.nano will be opening up the RIE-2Chamber-AMAT-P5000 to samples without metal.
Chamber A will run CF4/CHF3/Ar/O2 etches (mainly silicon oxide and nitride, but other films are possible), offering better resist selectivity for many processes.
Chamber B will run Cl2/HBr etches (mainly Si and Ge) and should have better resist selectivity than the SF6/Ar etch on the RIE-F-Samco.
Adding small amounts of O2 to the Cl2 based Si etch will also greatly improve selectivity of Si:SiO2.
Endpoint: There is also an optical emission system that can be used for endpoint detection if there is sufficient exposed area on your samples.
The P5000 is set up to run 6” wafers, so smaller wafers and pieces will need to be mounted to a 6” carrier wafer using Santovac oil.
These moves are in anticipation of allowing metals and more O2 processing in the RIE-F-Samco to alleviate some of the load from the RIE-Mixed-Samco. If you would like to move your process, please contact Eric Lim for discussion/training.